The Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS) is an academic research institution founded in 1993 under Resolution No. 173 of the Presidium of the Russian Academy of Sciences dated 28 September 1993, on the basis of the Solid State Physics Division of the Institute of Applied Physics of the Russian Academy of Sciences. It is located in Nizhny Novgorod.
History and leadership
The institute's first director was S. V. Gaponov, elected a corresponding member of the Russian Academy of Sciences in 1994 and a full academician in 2008; since 2009 he has held the status of advisor to the Academy. In 2009 IPM RAS was headed by professor Z. F. Krasilnik; in 2015 he was succeeded by professor V. I. Gavrilenko, and in 2016 Z. F. Krasilnik again became director. In 2020, V. I. Gavrilenko was again appointed acting director, and in 2021 the institute was headed by A. V. Novikov.[1] Since 1993, Alexander Alexandrovich Andronov has served as deputy director of the institute.[1]
From 2009 to 2016 the institute was part of the Nizhny Novgorod Scientific Center of the Russian Academy of Sciences; since 2016 it has been part of the Department of Physical Sciences of the Russian Academy of Sciences.[1]
Research areas
The institute conducts fundamental research in surface physics, solid-state nanostructures, superconductivity and multilayer X-ray optics, as well as the technology and application of thin films, surface and multilayer structures. The institute was the first to obtain stimulated terahertz radiation in n-Si under intraband optical excitation, the first to create a quantum voltage standard based on Josephson junctions made from high-temperature superconductors, and has also developed elements of silicon nanooptics, radiation-hardened magnetic memory, and MEMS vibration accelerometers.[4][1]
Composition
IPM RAS employs 275 staff, more than 140 of them researchers, including 21 doctors of science and 73 candidates of science. The institute comprises 6 research departments, the Laboratory for the Fundamentals of Nanoelectronic Component Base of Information Technologies, a Scientific and Educational Center, and the "Physics and Technology of Micro- and Nanostructures" shared-use center, as well as the unique "Femtospectrum" test bench.[4] Among its staff are 8 laureates of the State Prize and 1 laureate of the State Prize of the Russian Federation for Young Scientists.[1] According to current data on the institute's official website, among the 275 staff are more than 180 researchers, including 25 doctors and 80 candidates of science, one full academician, and two corresponding members of the Russian Academy of Sciences; the website also lists silicon optoelectronics, terahertz-range spectroscopy, and spintronics among its research areas.
IPM RAS maintains close ties with Lobachevsky State University of Nizhny Novgorod: in 2004 the institute opened the interfaculty base department of UNN "Physics of Nanostructures and Nanoelectronics," and more than 20 institute staff teach at the university.[5] The institute has a dedicated building with 9,000 square meters of laboratory space, equipped with clean rooms, a water deionization unit, an air conditioning system, and gas piping; the institution's actual address is 7 Akademicheskaya Street, the village of Afonino, Kstovsky District, Nizhny Novgorod Region.[3][2]
Sources
- old.ipmras.ru — On 1 March 2016 the Institute for Physics of Microstructures became part of the Federal Research Center Institute of Applied Physics of the Russian Academy of Sciences on the
- bigenc.ru — The institute was the first to obtain stimulated terahertz radiation in n-Si under intraband optical excitation, the first to create a quantum voltage standard based on (archived)
- mathnet.ru — IPM RAS maintains close ties with Lobachevsky State University of Nizhny Novgorod: in 2004 the institute opened the interfaculty base depart (archived)
- Wikipedia (ru) — Institute for Physics of Microstructures RAS
- ipmras.ru — Institute for Physics of Microstructures RAS, official website (archived)
Material used from articles (2)
Andronov Alexander Alexandrovich, Institute of Applied Physics of the Russian Academy of Sciences